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MITSUBISHI SEMICONDUCTOR TRIAC
BCR3AS
Refer to the page 6 as to the product guaranteed maximum junction temperature 150C
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR3AS
OUTLINE DRAWING
Dimensions in mm
6.5 4
1.50.2
5.00.2
0.50.1
TYPE NAME VOLTAGE CLASS
5.50.2
0.9 MAX
1.0 2.3
2.3 MIN
1.0 MAX
10 MAX
0.50.2 0.8
2.3
2.3
Measurement point of
case temperature
1
2
3 24 1 2 33 4 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL
* IT (RMS) ........................................................................ 3A * VDRM ....................................................................... 600V * IFGT !, IRGT !, IRGT # .......................... 15mA (10mA) 5 APPLICATION Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blankets, control of household equipment such as washing machine, other general purpose control applications
1
MP-3
MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage 1 Non-repetitive peak off-state voltage 1 Voltage class 12 600 720 Unit V V
Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg --
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value
Conditions Commercial frequency, sine full wave 360 conduction, Tc=108C3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Ratings 3 30 3.7 3 0.3 6 0.3 -40 ~ +125 -40 ~ +125 0.26
Unit A A A2s W W V A C C g
1. Gate open.
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR3AS
Refer to the page 6 as to the product guaranteed maximum junction temperature 150C
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage
4
Parameter Repetitive peak off-state current On-state voltage ! Gate trigger voltage 2 @ # ! Gate trigger current 2 @ # Tj=125C, VD=1/2VDRM Junction to case 3 Tj=125C
Test conditions Tj=125C, VDRM applied Tc=25C, ITM=4.5A, Instantaneous measurement
Min. -- -- --
Typ. -- -- -- -- -- -- -- -- -- -- --
Max. 2.0 1.7 1.5 1.5 1.5 15 5 15 5 15 5 -- 3.8 --
Unit mA V V V V mA mA mA V C/ W V/s
Tj=25C, VD=6V, RL=6, RG=330
-- -- --
Tj=25C, VD=6V, RL=6, RG=330
-- -- 0.2 -- 5
2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured on the T2 terminal. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. High sensitivity (IGT10mA) is also available. (IGT item1)
Test conditions
Commutating voltage and current waveforms (inductive load)
1. Junction temperature Tj=125C 2. Rate of decay of on-state commutating current (di/dt)c=-1.5A/ms 3. Peak off-state voltage VD=400V
SUPPLY VOLTAGE (di/dt)c
TIME
MAIN CURRENT MAIN VOLTAGE (dv/dt)c
TIME TIME VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS 102
ON-STATE CURRENT (A) SURGE ON-STATE CURRENT (A)
RATED SURGE ON-STATE CURRENT 40
7 5 3 2
Tj = 25C
35 30 25 20 15 10 5 0 100 2 3 4 5 7 101 2 3 4 5 7 102
101 7 5 3 2 100 7 5 3 2 10-1 0 1 2 3 4 5
ON-STATE VOLTAGE (V)
CONDUCTION TIME (CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR3AS
Refer to the page 6 as to the product guaranteed maximum junction temperature 150C
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS (, AND )
GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE
100 (%)
GATE VOLTAGE (V)
101 7 5 3 2 100 7 5 3 2
PGM = 3W PG(AV) = 0.3W IGM = 0.5A
GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C)
102 7 5 3 2
103 7 5 4 3 2
TYPICAL EXAMPLE IRGT III
IFGT I, IRGT III IRGT I
102 IFGT I, IRGT I 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)
VGD = 0.2V 10-1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE
MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE)
100 (%)
GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C)
103 7 5 4 3 2 102 7 5 4 3 2 101
TRANSIENT THERMAL IMPEDANCE (C/W)
4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz)
TYPICAL EXAMPLE
-60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)
MAXIMUM ON-STATE POWER DISSIPATION
ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CURVES APPLY REGARDLESS 140 OF CONDUCTION ANGLE
ON-STATE POWER DISSIPATION (W)
10
8
360 CONDUCTION 6 RESISTIVE, INDUCTIVE LOADS 4
CASE TEMPERATURE (C)
3 4 5
120 100 80 60 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A)
2
0
0
1
2
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR3AS
Refer to the page 6 as to the product guaranteed maximum junction temperature 150C
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C)
AMBIENT TEMPERATURE (C)
ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS ON-STATE CURRENT (A)
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)
HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) TYPICAL EXAMPLE
LACHING CURRENT (mA)
LACHING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2
100 (%)
DISTRIBUTION
HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C)
+ T2 , G- TYPICAL EXAMPLE
100 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)
+ T2 , G+ TYPICAL - - T2 , G EXAMPLE
100 (%)
BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE
100 (%)
BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) I QUADRANT III QUADRANT Tj = 125C
160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (C)
BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s )
BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C)
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR3AS
Refer to the page 6 as to the product guaranteed maximum junction temperature 150C
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s)
COMMUTATION CHARACTERISTICS 7 5 4 3 2 101 7 5 4 3 2
SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD
GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102
100 (%)
GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC)
TYPICAL EXAMPLE Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz
TYPICAL EXAMPLE IRGT III IRGT I IFGT I
MINIMUM CHARACTERISTICS VALUE
III QUADRANT
100 I QUADRANT 70 10 2 3 4 5 7 101
2 3 4 5 7 102
RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms)
GATE CURRENT PULSE WIDTH (s)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6
6V V
A RG
6V V
A RG
TEST PROCEDURE 1 6
TEST PROCEDURE 2
6V V
A RG
TEST PROCEDURE 3
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR3AS
The product guaranteed maximum junction temperature 150C (See warning.)
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR3AS
OUTLINE DRAWING
Dimensions in mm
6.5 4
1.50.2
5.00.2
0.50.1
TYPE NAME VOLTAGE CLASS
5.50.2
0.9 MAX
1.0 2.3
2.3 MIN
1.0 MAX
10 MAX
0.50.2 0.8
2.3
2.3
Measurement point of
case temperature
1
2
3 24 1 2 33 4 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL
* IT (RMS) ........................................................................ 3A * VDRM ....................................................................... 600V * IFGT !, IRGT !, IRGT # .......................... 15mA (10mA) 5 APPLICATION Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blankets, control of household equipment such as washing machine, other general purpose control applications
1
MP-3
(Warning) 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied.
MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage 1 Non-repetitive peak off-state voltage 1 Voltage class 12 600 720 Unit V V
Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg --
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value
Conditions Commercial frequency, sine full wave 360 conduction, Tc=133C3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Ratings 3 30 3.7 3 0.3 6 0.3 -40 ~ +150 -40 ~ +150 0.26
Unit A A A2s W W V A C C g
1. Gate open.
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR3AS
The product guaranteed maximum junction temperature 150C (See warning.)
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage
4
Parameter Repetitive peak off-state current On-state voltage ! Gate trigger voltage 2 @ # ! Gate trigger current 2 @ #
Test conditions Tj=150C, VDRM applied Tc=25C, ITM=4.5A, Instantaneous measurement
Min. -- -- --
Typ. -- -- -- -- -- -- -- -- -- -- --
Max. 2.0 1.7 1.5 1.5 1.5 15 5 15 5 15 5 -- 3.8 --
Unit mA V V V V mA mA mA V C/ W V/s
Tj=25C, VD=6V, RL=6, RG=330
-- -- --
Tj=25C, VD=6V, RL=6, RG=330
-- --
Tj=125C/150C, VD=1/2VDRM Junction to case 3 Tj=125C/150C
0.2/0.1 -- 5/1
2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured on the T2 terminal. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. High sensitivity (IGT10mA) is also available. (IGT item1)
Test conditions
Commutating voltage and current waveforms (inductive load)
1. Junction temperature Tj=125C/150C 2. Rate of decay of on-state commutating current (di/dt)c=-1.5A/ms 3. Peak off-state voltage VD=400V
SUPPLY VOLTAGE (di/dt)c
TIME
MAIN CURRENT MAIN VOLTAGE (dv/dt)c
TIME TIME VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS 102
SURGE ON-STATE CURRENT (A)
7 5
RATED SURGE ON-STATE CURRENT 40 35 30 25 20 15 10 5 0 100 2 3 4 5 7 101 2 3 4 5 7 102
ON-STATE CURRENT (A)
3 2
101
7 5 3 2
Tj = 150C
100
7 5 3 2
Tj = 25C 1.0 1.5 2.0 2.5 3.0 3.5 4.0
10-1
0.5
ON-STATE VOLTAGE (V)
CONDUCTION TIME (CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR3AS
The product guaranteed maximum junction temperature 150C (See warning.)
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS (, AND )
100 (%)
GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 TYPICAL EXAMPLE IRGT III
5 3 2
GATE VOLTAGE (V)
PG(AV) = 0.3W
IGM = 0.5A
GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C)
101 7 5 3 2 100 7 5 3 2
PGM = 3W
IFGT I, IRGT III IRGT I VGD = 0.1V
10-1 7 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT (mA)
102 IFGT I, IRGT I 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE
100 (%) TRANSIENT THERMAL IMPEDANCE (C/W)
MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz)
GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C)
103 7 5 4 3 2 102 7 5 4 3 2 101
TYPICAL EXAMPLE
-60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
MAXIMUM ON-STATE POWER DISSIPATION
ON-STATE POWER DISSIPATION (W)
ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160
CASE TEMPERATURE (C)
10
140 CURVES APPLY 120 REGARDLESS OF CONDUCTION 100 ANGLE 80 60 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A)
Mar. 2002
8
360 CONDUCTION 6 RESISTIVE, INDUCTIVE LOADS 4
2
0
0
1
2
3
4
5
RMS ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR TRIAC
BCR3AS
The product guaranteed maximum junction temperature 150C (See warning.)
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 106
7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2
REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C)
AMBIENT TEMPERATURE (C)
ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF 120 CONDUCTION ANGLE 100 RESISTIVE, INDUCTIVE LOADS 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS ON-STATE CURRENT (A)
TYPICAL EXAMPLE
105
104
103
102 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
HOLDING CURRENT VS. JUNCTION TEMPERATURE
LACHING CURRENT VS. JUNCTION TEMPERATURE 103
7 5 3 2
100 (%)
103
HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C)
LACHING CURRENT (mA)
7 5 4 3 2
TYPICAL EXAMPLE
DISTRIBUTION
+ T2 , G- TYPICAL EXAMPLE
102
7 5 3 2
102
7 5 4 3 2
101
7 5 3 2
+ T2 , G+ TYPICAL - - T2 , G EXAMPLE
101 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
100 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
100 (%)
BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE
BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 125C) 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s)
Mar. 2002
100 (%)
160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
Tj = 125C
BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s )
BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C)
III QUADRANT
I QUADRANT
MITSUBISHI SEMICONDUCTOR TRIAC
BCR3AS
The product guaranteed maximum junction temperature 150C (See warning.)
BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 150C) 160 TYPICAL EXAMPLE 140
BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s )
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s)
COMMUTATION CHARACTERISTICS (Tj = 125C) 7 5 3 2 101 7 5 3 MINIMUM CHARAC2 TERISTICS
VALUE
SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD
Tj = 150C
120 100 80 60 I QUADRANT 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) III QUADRANT
TYPICAL EXAMPLE Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz
III QUADRANT
100 I QUADRANT 70 10 23 5 7 101
23
5 7 102
RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms)
CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s)
COMMUTATION CHARACTERISTICS (Tj = 150C)
SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD
GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102
100 (%)
7 5 3 2 101 7 5 3 2
GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC)
TYPICAL EXAMPLE Tj = 150C IT = 4A = 500s VD = 200V f = 3Hz
TYPICAL EXAMPLE IRGT III IRGT I IFGT I
III QUADRANT
I QUADRANT
MINIMUM CHARACTERISTICS VALUE
100 70 10
23
5 7 101
23
5 7 102
RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms)
GATE CURRENT PULSE WIDTH (s)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6
RECOMMENDED CIRCUIT VALUES AROUND THE TRIAC
LOAD 6V V A RG 6V V A RG C1 R1 C1 = 0.1~0.47F R1 = 47~100 C0 R0 C0 = 0.1F R0 = 100
TEST PROCEDURE 1 6
TEST PROCEDURE 2
6V V
A RG
TEST PROCEDURE 3
Mar. 2002

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